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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 34 6.5 16 Single 250 0.435
FEATURES
* * * * * * * * Advanced Process Technology Dynamic dV/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
I2PAK (TO-262) TO-220
D
S G D
G
D2PAK (TO-263)
S N-Channel MOSFET
GD S
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF634NL/SiHF634NL) is available for low-profile application.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRF634NPbF SiHF634N-E3 IRF634N SiHF634N D2PAK (TO-263) IRF634NSPbF SiHF634NS-E3 IRF634NS SiHF634NS D2PAK (TO-263) IRF634NSTRLPbFa SiHF634NSTL-E3a IRF634NSTRLa SiHF634NSTLa D2PAK (TO-263) IRF634NSTRRPbFa SIHF634NSTR-E3a IRF634NSTRRa SiHF634NSTRa I2PAK (TO-262) IRF634NLPbF SiHF634NL-E3 -
Note a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91033 S-Pending-Rev. A, 19-Jun-08 www.vishay.com 1 EAS IAR EAR VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 250 20 8.0 5.6 32 0.59 110 4.8 8.8 W/C mJ A mJ A UNIT V
WORK-IN-PROGRESS
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torqued for 10 s 6-32 or M3 screw SYMBOL TC = 25 C TA = 25 C PD dV/dt TJ, Tstg LIMIT 88 3.8 7.3 - 55 to + 175 300c 10 1.1 UNIT W V/ns C lbf * in N*m
Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 C, L = 9.5 mH, RG = 25 , IAS = 4.8 A, VGS = 10 V. c. 1.6 mm from case. d. This is only applied to TO-220 package. e. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambienta Maximum Junction-to-Ambient (PCB Mount)b Maximum Junction-to-Case (Drain) Case-to-Sink, Flat, Greased Surfacea SYMBOL RthJA RthJA RthJC RthCS TYP. 0.50 MAX. 62 40 1.7 C/W UNIT
Notes a. This is only applied to TO-220 package. b. This is applied to D2PAK, when mounted 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 125 V, ID = 4.8 A, RG = 1.3 , see fig. 10b VGS = 10 V VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 ID = 4.8 A, VDS = 200 V, see fig. 6 and 13b 620 84 23 8.4 16 28 15 34 6.5 16 ns nC pF VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 150 C VGS = 10 V ID = 4.8 Ab VDS = 50 V, ID = 4.8 Ab 250 2.0 5.4 0.33 4.0 100 25 250 0.435 V V/C V nA A S SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
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Document Number: 91033 S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Dynamic Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
LD LS
Between lead, 6 mm (0.25") from package and center of die contact
D
G
4.5 7.5
nH -
S
-
130 650
8.0 A 32 1.3 200 980 V ns nC
G
S
TJ = 25 C, IS = 4.8 A, VGS = 0
Vb
TJ = 25 C, IF = 4.8 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
102
VGS Top
102
ID, Drain-to-Source Current (A)
15 V 10 V 8.0 V 7.0 V 10 6.0 V 5.5 V 5.0 V Bottom 4.5 V
ID, Drain-to-Source Current (A)
10
1 4.5 V 0.1 20 s Pulse Width TC = 25 C 1 10 102
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top
4.5 V
1
10-2 0.1
91033_01
0.1 0.1
91033_02
20 s Pulse Width TC = 175 C 1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
Document Number: 91033 S-Pending-Rev. A, 19-Jun-08
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
102
1200 1000 Ciss
ID, Drain-to-Source Current (A)
10
TJ = 175 C
C, Capacitance (pF)
VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd
800 Coss 600 400 200 0 Crss
1 TJ = 25 C 20 s Pulse Width VDS = 50 V 5.0 6.0 7.0 8.0 9.0
0.1 4.0
91033_03
1
91033_05
10
102
103
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
RDS(on), Drain-to-Source On Resistance (Normalized)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
VGS, Gate-to-Source Voltage (V)
ID = 7.9 A VGS = 10 V
20
ID = 4.8 A VDS = 200 V VDS = 125 V
16
12
VDS = 50 V
8
4
For test circuit see figure 13
0.0 - 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
0 0
91033_06
10
20
30
40
91033_04
TJ, Junction Temperature (C)
QG, Total Gate Charge (nC)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Document Number: 91033 S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
102
10.0
ISD, Reverse Drain Current (A)
10 TJ = 175 C
ID, Drain Current (A)
VGS = 0 V 1.2
91033_09
8.0
6.0
1 TJ = 25 C
4.0
2.0
0.1 0.2
91033_07
0.4
0.6
0.8
1.0
0.0 25
50
75
100
125
150
175
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
TC, Case Temperature (C) Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
VDS VGS 102
D.U.T. + - VDD
ID, Drain-to-Source Current (A)
Operation in this area limited by RDS(on)
RG
10 V 10 100 s
Pulse width 1 s Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
1 TC = 25 C TJ = 175 C Single Pulse 1 10 102 1 ms VDS 90 % 10 ms 103 10 % VGS td(on) tr td(off) tf
0.1
91033_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 10b - Switching Time Waveforms
Document Number: 91033 S-Pending-Rev. A, 19-Jun-08
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10
Thermal Response (ZthJC)
1
0 - 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-3 10-2 0.1
0.1
Single Pulse (Thermal Response)
10-2 10-5
91033_11
10-4
t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS tp
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Avalanche Energy (mJ)
200
160
ID 2.0 A 3.4 A Bottom 4.8 A Top
120
80
40
0 25 50 75 100 125 150 175
91033_12c
Starting TJ, Junction Temperature (C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
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Document Number: 91033 S-Pending-Rev. A, 19-Jun-08
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Current regulator Same type as D.U.T. QG
12 V 0.2 F 0.3 F 50 k
VGS QGS
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91033.
Document Number: 91033 S-Pending-Rev. A, 19-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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